vds= 20v rds(on), vgs@2.5v, ids@3.4a rds(on), vgs@4.v, ids@4.3a features advanced trench process technology high density cell design for ultra low on-resistance high power and current handing capability ideal for li ion battery pack applications package dimensions maximum ratings and thermal characterist ics (ta = 25oc unless otherwise noted) parameter symbol limit unit drain-source voltage v ds 20 gate-source voltage v gs 12 v continuous drain current i d 4 pulsed drain current 1) i dm 25 a ta = 25 o c 1.4 maximum power dissipation ta = 75 o c p d 1 w operating junction and storage temperature range t j , t stg -55 to 150 o c junction-to-ambient thermal resistance (pcb mounted) 2) r ja 100 o c/w notes pulse width limited by maximum junction temperature. surface mounted on fr4 board, t 5 sec. 1) 2) ? 30m ? 46m m illi m e t er m illi m e t er r e f . m in . m a x. r e f. m in. m a x . a 1 . 10 m a x . l 0 . 45 r e f. a 1 0 0 . 10 l1 0 . 60 r e f . a 2 0 . 70 1 . 00 0 10 c 0 . 12 r e f. b 0 . 30 0 . 50 d 2 . 70 3 . 10 e 0 . 95 r e f. e 2 . 60 3 . 00 e 1 1 . 90 r e f. e 1 1 . 40 1 . 80 sot-163 20v dual n-channel enhancement mode mosfet PT8205 1 date:2011/05 www.htsemi.com semiconductor jinyu
electrical characteristics parameter test condition static drain-source breakdown voltage bv dss v gs = 0v, i d = 250ua 20 v drain-source on-state resistance r ds(on) v gs = 2.5v, i d = 3.4a 35 drain-source on-state resistance r ds(on) v gs = 4.0v, i d = 4.3a 30 m gate threshold voltage v gs(th) v ds =v gs , i d = 250ua 0.5 0.8 1.5 v zero gate voltage drain current 0 i dss v ds = 16v, v gs = 0v 1 ua gate body leakage i gss v gs = 8v, v ds = 0v 100 na forward transconductance g fs v ds = 5v, i d = 4a 10 s dynamic total gate charge q g 11 gate-source charge q gs 2.2 gate-drain charge q gd v ds = 10v, i d = 4a v gs = 4v 2.5 nc turn-on delay time t d(on) turn-on rise time t r turn-off delay time t d(off) turn-off fall time t f v dd = 10v, r g = 10 ? i d = 1a, v gs = 4v ns input capacitance c iss output capacitance c oss reverse transfer capacitance c rss v ds = 8v, v gs = 0v f = 1.0 mhz pf source-drain diode max. diode forward current i s a diode forward voltage v sd i s = 1.7a, v gs = 0v v note:pulse test: pulse width <= 300us, duty cycle<= 2% symbol min. unit max. typ. 1) 27 46 43.5 4.8 18.3 20 155 800 125 2 1.2 0.8 2 date:2011/05 www.htsemi.com semiconductor jinyu 20v dual n-channel enhancement mode mosfet PT8205
3 date:2011/05 www.htsemi.com semiconductor jinyu 20v dual n-channel enhancement mode mosfet PT8205
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